IS42S16100C1是ISSI的16Mb Synchronous DRAM，具有200, 166, 143 MHz的频率，两组内存可以同时独立操作，支持LVTTL接口，支持4096 refresh cycles every 64 ms，支持Random column address every clock cycle，支持Programmable CAS latency (2, 3 clocks)，支持Burst read/write and burst read/single write operations capability，支持Burst termination by burst stop and precharge command，支持Byte controlled by LDQM and UDQM，支持Industrial temperature up to 143 MHz，支持400-mil 50-pin TSOP-II, 60-ball fBGA，支持Lead-free package option。
