HARRIS IRF244, IRF245, IRF246, IRF247 数据手册

更新: 30 September, 2023

IRF244, IRF245, IRF246, IRF247 是 N-Channel enhancement mode silicon gate power field effect transistors, 特点包括 14A and 13A, 275V and 250V, rDS(ON) = 0.28Ω and 0.34Ω, Single Pulse Avalanche Energy Rated, SOA is Power Dissipation Limited, Nanosecond Switching Speeds, Linear Transfer Characteristics, High Input Impedance, 275V, 250V DC Rated - 120V AC Line System Operation

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文件格式: PDF

体积: -

MD5: F730872B6321ED3023864CBC8D06C7BB

发布时间: 15 June, 2012

下载: -

连接: HARRIS IRF244, IRF245, IRF246, IRF247 数据手册 PDF